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semiconductor group 01 / 1999 1 SPP04N60S5 spb04n60s5 preliminary data cool mos ? power transistor new revolutionary high voltage technology ultra low gate charge periodic avalanche proved extreme d v /d t rated optimized capacitances improved noise immunity former development designation: sppx6n60s5/spbx6n60s5 g,1 d,2 s,3 c power semiconductors o o l mos type v ds i d r ds(on) package marking ordering code SPP04N60S5 spb04n60s5 600 v 4.5 a 0.95 w p-to220-3-1 p-to263-3-2 04n60s5 04n60s5 q67040-s4200 q67040-s4201 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 4.5 2.8 a pulsed drain current, t p = 1ms 1) t c = 25 c i d puls 7.7 avalanche energy, single pulse i d = 4.5 a, v dd = 50 v, r gs = 25 w periodic avalanche energy e ar only limited by t jmax e as 130 mj reverse diode d v /d t i s = 4.5 a, v ds < v dss , d i /d t = 100 a/s, t jmax = 150 c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 c p tot 50 w operating and storage temperature t j , t stg -55 ...+150 c
semiconductor group 01 / 1999 2 SPP04N60S5 spb04n60s5 preliminary data electrical characteristics parameter symbol values unit at t j = 25 c, unless otherwise specified min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2.5 k/w thermal resistance, junction - ambient (leaded and through-hole packages) r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - 35 62 - static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma v (br)dss 600 - - v gate threshold voltage, v gs = v ds i d = 200 a, t j = 25 c v gs(th) 3.5 4.5 5.5 zero gate voltage drain current, v ds = v dss v gs = 0 v, t j = 25 c v gs = 0 v, t j = 150 c i dss - - 0.5 - 1 50 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - - 100 na drain-source on-state resistance v gs = 10 v, i d = 2.8 a r ds(on) - 0.85 0.95 w 1 current limited by t jmax 2 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air.
semiconductor group 01 / 1999 3 SPP04N60S5 spb04n60s5 preliminary data electrical characteristics parameter symbol values unit at t j = 25 c, unless otherwise specified min. typ. max. characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = 2.8 a g fs - 2.5 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 600 - pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 325 - reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 15 - turn-on delay time v dd = 350 v, v gs = 10 v, i d = 4.5 a, r g = 18 w t d(on) - 40 - ns rise time v dd = 350 v, v gs = 10 v, i d = 4.5 a, r g = 18 w t r - 20 - turn-off delay time v dd = 350 v, v gs = 10 v, i d = 4.5 a, r g = 18 w t d(off) - 60 - fall time v dd = 350 v, v gs = 10 v, i d = 4.5 a, r g = 18 w t f - 20 -
semiconductor group 01 / 1999 4 SPP04N60S5 spb04n60s5 preliminary data electrical characteristics parameter symbol values unit at t j = 25 c, unless otherwise specified min. typ. max. gate charge characteristics gate-source charge i d = 4.5 a, v dd = 350 v q gs - 4.1 - nc gate-drain charge i d = 4.5 a, v dd = 350 v q gd - 9.2 - total gate charge v dd = 350 v, i d = 4.5 a, v gs = 0 to 10 v q g - 17 - reverse diode inverse diode continuous forward current t c = 25 c i s - - 4.5 a inverse diode direct current,pulsed t c = 25 c i sm - - 7.7 inverse diode forward voltage v gs = 0 v, i f = 4.5 a v sd - 1 1.2 v reverse recovery time v r = 350 v, i f = i s , d i f /d t = 100 a/s t rr - 900 - ns reverse recovery charge v r = 350 v, i f = l s , d i f /d t = 100 a/s q rr - 3.2 - c
semiconductor group 01 / 1999 5 SPP04N60S5 spb04n60s5 preliminary data drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 a 5.0 SPP04N60S5 i d power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 150 0 5 10 15 20 25 30 35 40 45 w 55 SPP04N60S5 p tot transient thermal impedance z thjc = f(t p ) parameter: d=t p /t 10 -5 10 -4 10 -3 10 -2 10 -1 s t p -2 10 -1 10 0 10 1 10 k/w z thjc d=0.5 d=0.2 d=0.1 d=0.05 d=0.02 d=0.01 single pulse safe operating area i d = f ( t c ) parameter: d =0.01, t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a SPP04N60S5 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 7.1 s
semiconductor group 01 / 1999 6 SPP04N60S5 spb04n60s5 preliminary data drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 2.8 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 w 3.4 SPP04N60S5 r ds(on) typ 98% typ. output characteristic i d = f(v ds ); t j =25c parameter: v gs 0 4 8 12 16 20 v 26 v ds 0 1 2 3 4 5 6 7 8 9 10 11 12 a 14 i d 7v 9v 11v 13v typ. capacitances c = f( v ds ) parameter: v gs =0 v, f =1 mhz 0 10 20 30 40 50 60 70 80 v 100 v ds -1 10 0 10 1 10 2 10 3 10 4 10 pf c ciss coss crss typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on)max 1 3 5 7 9 11 13 15 17 v 20 v gs 1 2 3 4 5 6 7 8 9 10 11 12 13 a 15 i d
semiconductor group 01 / 1999 7 SPP04N60S5 spb04n60s5 preliminary data avalanche energy e as = f ( t j ) parameter: i d = 4.5 a, v dd = 50 v r gs = 25 w 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 mj 160 e as gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 200 a -60 -20 20 60 100 c 180 t j 0 1 2 3 4 5 v 7 v gs(th) typ. 98% 2% drain-source break down voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 500 520 540 560 580 600 620 640 660 v 700 v (br)dss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -2 10 -1 10 0 10 1 10 a SPP04N60S5 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
semiconductor group 01 / 1999 8 SPP04N60S5 spb04n60s5 preliminary data typ. gate charge v gs = f ( q gate ) parameter: i dpuls = 4.5 a 0 4 8 12 16 20 nc 28 q g 0 2 4 6 8 10 12 v 16 SPP04N60S5 v gs ds max v 0,8 ds max v 0,2
semiconductor group 01 / 1999 9 SPP04N60S5 spb04n60s5 preliminary data p-to220-3-1 dimensions [mm] symbol min max a 9.70 10.30 b 14.88 15.95 c0.650.86 d3.553.89 e2.603.00 f6.006.80 g 13.00 14.00 h4.354.75 k0.380.65 l0.951.32 m n4.304.50 p1.171.40 t2.302.72 2.54 t y p.
semiconductor group 01 / 1999 10 SPP04N60S5 spb04n60s5 preliminary data p-to263-3-2 dimensions [mm] symbol min max a9.8010.20 b 0.70 1.30 c 1.00 1.60 d 1.03 1.07 e f 0.65 0.85 g h 4.30 4.50 k 1.17 1.37 l 9.05 9.45 m 2.30 2.50 n p 0.00 0.20 q 4.20 5.20 r s 2.40 3.00 t 0.40 0.60 u v w x y z 16.15 15 t y p. 6.23 1.15 10.80 8 max 2.54 t y p. 5.08 t y p. 4.60 9.40
semiconductor group 01 / 1999 11 SPP04N60S5 spb04n60s5 preliminary data edition 01 / 1999 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the express written approval of the semiconductor group of siemens ag. 1)a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other p ersons ma y be endan g ered.

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